Ferroelectric memories at last

15th March 2023

Timing : 1 pm EST

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For a list of all talks at the NanoBio seminar Series Spring'23, see here


In spite of being one of the first (or perhaps the first) non-volatile semiconducting memory demonstrated almost 70 years ago, ferroelectrics have struggled to compete in the race towards miniaturization. It is only recently that ferroelectric memories can be scaled down sufficiently to be introduced at the industrial scale. The enabler of this success is hafnia (HfO2), traditionally used as a refractory material and, more recently, as insulating layer in transistors. No one expected to find any interesting electronic functionality in HfO2. Surprisingly, since a decade ago, it is possible to stabilize it in a polar switchable (ferroelectric) state at sizes as small as a few nanometers, something that is not possible in any other known ferroelectric. How this material managed to achieve this is not fully understood but as time passes, we slowly gather more pieces of the hafnia puzzle. Interestingly the advent of hafnia-based ferroelectrics, coincides with the surge of research on neuromorphic materials and the hafnia family also show great promise as artificial synapses. I will give an overview of the most important results from my group on this interesting material.